Self-repair method for nonvolatile memory devices using a supersecure architecture, and nonvolatile memory device
US6922366B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2003 |
| Grant date | Jul 26, 2005 |
| Priority date | — |
| Expiry date | Jul 20, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/808
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A self-repair method intervenes at the end of an operation of modification of a nonvolatile memory, selected between programming and erasing, in the event of detection of just one non-functioning cell, and carries out redundancy of the non-functioning cell. To this end, the memory array is divided into a basic portion, formed by a plurality of memory cells storing basic data, and into an in-the-field redundancy portion. The in-the-field redundancy portion is designed to store redundancy data that include a correct content of the non-functioning cell, the address of the non-functioning cell, and an activated redundancy flag. The redundancy is activated only after applying a preset maximum number of modification pulses and uses a redundancy replacement circuit and a redundancy data verification circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.