Copper interconnects
US6923891B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2003 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Apr 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a conductive region on a first portion of a substrate, the method being constituted by exposing the first portion to a filtered beam of substantially fully ionised metallic ions under a pulsed, modulated electrical bias. The method uses FCVA (Filtered Cathodic Vacuum Arc) techniques to generate the filtered ion beam and permits the formation of a conformal metal coating, even in high aspect ratio visa and trenches. The method also permits the in-filling of vias and trenches to form conductive interconnects. Particular examples concern the deposition of copper ions. An adapted FCVA apparatus deposits metals on substrates. A control apparatus controls ion beams impacting upon substrates, the control apparatus being suitable for incorporation within existing filtered ion beam sources.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.