Composite patterning integration
US6924070B2 · kind B2 · utility
1Cited by
1References
28Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 19, 2003 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Jul 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method and structure for masking are disclosed. In one embodiment, a thin layer of radiation sensitive material is combined with another layer of radiation opaque material with different etch selectivity to facilitate a multi-stage patterning treatment of an underlying mask layer and a resultant critical dimension in the patterned mask which may be less than that available using conventional patterning techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.