Photomask and method for reducing exposure times of high density patterns on the same
US6924071B1 · kind B1 · utility
3Cited by
2References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 28, 2001 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Aug 2, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70441
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for reducing exposure times for high density patterns on a photomask is disclosed. The method includes moving a selected feature located in a cell between a first boundary and a second boundary from a first pattern file to a second pattern file and exposing a resist layer of a photomask blank with the first pattern file by using a step and repeat technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.