Photosensitive material for immersion photolithography
US6924081B1 · kind B1 · utility
0Cited by
1References
7Claims
0Family size
Inventor
Key dates
| Filing date | Feb 10, 2004 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Feb 28, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K2323/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
When rays of light converge inside a photosensitive material at angles larger than 70 degrees, one polarization of the light may fail to produce the desired image contrast in conventional exposure media. This invention describes a material which may be applied to a semiconductor wafer surface which ensures that the photosensitive material is exposed principally by light polarized parallel to the semiconductor wafer surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.