Method of monitoring high tilt angle of medium current implant
US6924215B2 · kind B2 · utility
2Cited by
8References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 2002 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Sep 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of monitoring and adjusting the position of a wafer with respect to an ion beam including setting the position of a wafer holder so that a wafer to be held therein is positioned at a tilt angle of 45 degrees and a twist angle of 45 degrees with respect to the path of an ion beam; positioning a n-type wafer without screen oxide in the wafer holder; implanting boron species into a region of the wafer at 160 KeV and a dose level of 5.0×1013 atoms/cm2; periodically measuring the sheet resistivity of a implanted wafer and readjusting the wafer tilt angle when the sheet resistivity is greater than 30 ohms/square.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.