Sulfide encapsulation passivation technique
US6924218B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2002 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Dec 17, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/015
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for passivating a III-V material Schottky layer of a field effect transistor. The transistor has a gate electrode in Schottky contact with a gate electrode contact region of the Schottky layer. The gate electrode is adapted to control a flow of carriers between a source electrode of the transistor and a drain electrode of such tarnsistor. The transistor has exposed surface portions of the Schottky layer beween the source electrode and the drain electrode adjacent to the gate electrode contact region of the Schottky layer. The method includes removing organic contamination from the exposed surface portions of the Schottky layer using a oxygen plasma. The contamination removed surface portions of the Schottky layer are exposed to a solution of ammonium sulfide and NH4OH. After removal of the solution, the exposed regions are dried in a nitrogen enviroment. A layer of passivating material is deposited over the dried surface portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.