Organic integrated device for thin film transistor and light emitting diode and process for fabricating the same
US6924503B2 · kind B2 · utility
17Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2003 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Feb 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/464
Abstract
An organic integrated device for thin film transistor and light emitting diode. The organic integrated device of the present invention includes a top-gate organic thin film transistor (top-gate OTFT) and an organic light emitting diode (OLED), both formed on the same substrate. In the organic integrated device, some layers can be commonly used by both OTFT and OLED, and some layers can be made of the same material and formed in the same course, which simplifies the entire process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.