Silicon and silicon/germanium light-emitting device, methods and systems
US6924510B2 · kind B2 · utility
18Cited by
8References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 6, 2002 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | May 10, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12121
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light-emitting device and optical communication system based on the light-emitting device is disclosed. The light-emitting device is formed in a float-zone substrate. The light-emitting device includes on the substrate lower surface a reflective layer and on the upper surface spaced apart doped regions. The portion of the upper surface between the doped regions is textured and optionally covered with an antireflection coating to enhance light emission. The light-emitting device can operate as a laser or as a light-emitting diode, depending on the reflectivities of the antireflection coating and the reflective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.