Low-dielectric-constant interlayer insulating film composed of borazine-silicon-based polymer and semiconductor device
US6924545B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 11, 2002 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Mar 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low-dielectric-constant interlayer insulating film, which is composed of at least one selected from the group consisting of: (i) a low-dielectric-constant borazine-silicon-based polymer substance obtainable by reaction of, in the presence of a platinum catalyst, B,B′,B″-triethynyl-N,N′,N″-trimethylborazine with a specific silicon compound having at least two hydrosilyl groups; and (ii) a low-dielectric-constant borazine-silicon-based polymer substance obtainable by reaction of, in the presence of a platinum catalyst, B,B′,B″-triethynyl-N,N′,N″-trimethylborazine with a specific cyclic silicon compound having at least two hydrosilyl groups. A semiconductor device, which has the low-dielectric-constant interlayer insulating film. A low-refractive-index material, which is composed of the polymer substance (i) and/or (ii).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.