Low-capacity vertical diode
US6924546B2 · kind B2 · utility
0Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2002 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Sep 10, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
The invention concerns a low-capacity vertical diode designed to be mounted by a front surface made in a semiconductor substrate (1), comprising a first zone projecting relative to the surface of the substrate including at least a semiconductor layer (3) doped with a type of conductivity opposite to that of the substrate, the upper surface of the semiconductor layer bearing a first solder bump (23). The diode comprises a second zone including on the substrate a thick strip conductor (16) bearing at least second solder bumps (24), said first and second solder bumps defining a plane parallel to the substrate plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.