Method of forming a liquid crystal display
US6924874B2 · kind B2 · utility
9Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2003 |
| Grant date | Aug 2, 2005 |
| Priority date | — |
| Expiry date | Aug 29, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
Abstract
The present invention provides a method of forming a liquid crystal display (LCD). Active layers of N-type and P-type low temperature polysilicon thin film transistors and a bottom electrode of a storage capacitor are formed first. Then a N-type source/drain is formed and the bottom electrode is doped with dopants. A gate insulator, a gate electrode, a capacitor dielectric, and a top electrode are thereafter formed. After that, a P-type source/drain is formed. Finally, a source interconnect, a drain interconnect, and a pixel electrode of the liquid crystal display are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.