Solution-processed thin film transistor formation method
US6927108B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2003 |
| Grant date | Aug 9, 2005 |
| Priority date | — |
| Expiry date | Jul 9, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/1135
Abstract
An exemplary solution-processed thin film transistor formation method of the invention forms conductive solution-processed thin film material contacts, semiconductor solution-processed thin film material active regions, and dielectric solution-processed thin film material isolations in a sequence and organization to form a solution-processed thin film structure capable of transistor operation. During or after the formation of the transistor structure, laser ablation is applied to one or more of the conductive solution-processed thin film material contacts, the semiconductor solution-processed thin film material active regions and the dielectric solution-processed thin film material isolations to pattern or complete patterning of a material being selectively ablated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.