Interdigitated capacitor and method of manufacturing thereof
US6927125B2 · kind B2 · utility
17Cited by
7References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2004 |
| Grant date | Aug 9, 2005 |
| Priority date | — |
| Expiry date | Feb 11, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/212
Abstract
The present invention provides a method of manufacturing an interdigitated semiconductor device. In one embodiment, the method comprises simultaneously forming first electrodes adjacent each other on a substrate, forming a dielectric layer between the first electrodes, and creating a second electrode between the first electrodes, the second electrode contacting the dielectric layer between the first electrodes to thereby form adjacent interdigitated electrodes. An interdigitated capacitor and a method of manufacturing an integrated circuit having an interdigitated capacitor are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.