Method for manufacturing semiconductor device having controlled surface roughness
US6927167B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2003 |
| Grant date | Aug 9, 2005 |
| Priority date | — |
| Expiry date | Dec 11, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18301
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device with a substrate having a device layer and a backside electrode is disclosed. Here, a surface roughness of the substrate is defined as a ratio between a substantial area and a projected area. The method includes polishing and wet-etching a backside surface of the substrate mechanically with using predetermined abrasive grains so that a surface roughness of the backside surface of the substrate becomes to be equal to or larger than 1.04, and forming the backside electrode on the backside surface of the substrate after polishing and wet-etching the backside surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.