Radiation hardened visible P-I-N detector

US6927383B2 · kind B2 · utility

Assignee

• Raytheon Company · US

Inventors

• Andrew G. Toth · Lompoc, US
• Le Pham · Ventura, US
• Jerry R. Cripe · Lompoc, US

Key dates

• Filing date: Jul 26, 2002
• Grant date: Aug 9, 2005
• Expiry date: Dec 14, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/11

Abstract

Disclosed is a method for producing an array (20) of p-intrinsic-n light detectors, as is an array produced in accordance with the method. The method includes providing a wafer (1); forming a first layer (2) having a first type of electrical conductivity (e.g., n-type) over a surface of the wafer; forming a second layer (3) that is an intrinsic layer on the first layer and, for each light detector, implanting or diffusing a region (9A) into a surface of the second layer that is opposite the surface on the first layer, the region (9A) having a second type of electrical conductivity (e.g., p-type). The method further includes forming an opening or aperture, referred to herein as a V-groove (6), through the second layer at least to the first layer; and electrically contacting with a first electrical contact (15, 9B, 13B) the first layer through the V-groove. The method further electrically contacts each of the regions with an associated one of a second electrical contact (13A), where the first and second electrical contacts are located on a same, non-radiation receiving surface of the array. In a preferred embodiment the steps of electrically contacting each comprise forming an Indium…