Semiconductor device and method for fabricating the same
US6927463B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2003 |
| Grant date | Aug 9, 2005 |
| Priority date | — |
| Expiry date | May 15, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A semiconductor device of the present invention includes: a semiconductor substrate; a deep well region of a first conductivity type, formed in the semiconductor substrate; a plurality of shallow well regions of a second conductivity type, formed in the deep well region; a source region and a drain region of the first conductivity type, respectively formed in the plurality of shallow well regions; a channel region formed between the source region and the drain region; a gate insulating film formed on the channel region; and a gate electrode formed on the gate insulating film, wherein the gate electrode is electrically connected to a corresponding one of the shallow well regions, and the shallow well region is electrically separated from the adjacent shallow well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.