Method for the programming of an anti-fuse, and associated programming circuit
US6928021B2 · kind B2 · utility
3Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2003 |
| Grant date | Aug 9, 2005 |
| Priority date | — |
| Expiry date | Feb 5, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An anti-fuse transistor includes a source, a drain and a well connected together, and a gate. A method for programming the anti-fuse transistor includes applying a reference potential to the gate, and applying a high potential greater than the reference potential to the drain of the anti-fuse transistor. A first access transistor is connected to the anti-fuse transistor. The first access transistor includes a drain connected to the source of the anti-fuse transistor, and a source for receiving the high potential. Applying the high potential to the drain of the anti-fuse transistor includes turning on the first access transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.