Silicon dual inertial sensors
US6928873B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2003 |
| Grant date | Aug 16, 2005 |
| Priority date | — |
| Expiry date | Nov 1, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P15/125
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A silicon dual inertial sensor made of a (110) silicon chip comprises at least a proof-mass, which is connected to a corresponding inner frame with a plurality of sensing resilient beams to make it easier for the proof-mass to move perpendicular to the surface of the silicon chip (defined as z-axis), and each inner frame is connected to an outer frame with a plurality of driving resilient beams, or connected to common connection beams, which are then connected to a central anchor with common resilient supporting beams to make it easier for the inner frame to move in parallel with the surface of the silicon chip (defined as y-axis). Each inner frame is driven by a driver to move in an opposite direction along the y-axis, and also move the proof-mass in the opposite direction along the y-axis. If there is a rotation rate input along the x-axis, it will generate a Coriolis force to make each proof-mass move in the opposite direction of the z-axis. If an acceleration is input along the z-axis, the specific force will move the proof-masses with the same direction. When the proof-masses move or oscillate, the capacitance of the capacitor formed with sensing electrodes will change due to …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.