Method of reducing pattern distortions during imprint lithography processes
US6929762B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 13, 2002 |
| Grant date | Aug 16, 2005 |
| Priority date | — |
| Expiry date | Nov 25, 2023 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB29C2059/023
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
The present invention is directed to a method of reducing distortions in a pattern disposed on a layer of a substrate, defining a recorded pattern, employing a mold having the pattern recorded therein, defining an original pattern. The method includes, defining a region on the layer in which to produce the recorded pattern. Relative extenuative variations between the substrate and the mold are created to ensure that the original pattern defines an area coextensive with the region. Thereafter, the recorded pattern is formed in the region. The relative extenuative variations are created by heating or cooling of the substrate so that the region defines an area that is slightly smaller/larger than the area of the original pattern. Then compression/tensile forces are applied to the mold to provide the recorded pattern with an area coextensive with the area of the region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.