Shallow trench isolation structure and method
US6930018B2 · kind B2 · utility
7Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2002 |
| Grant date | Aug 16, 2005 |
| Priority date | — |
| Expiry date | Dec 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a shallow trench isolation (STI) structure and methods of manufacturing the same. The methods eliminate the requirement for design size adjustments (DSA) in manufacturing the STI structure. Further disclosed is an STI trench liner and methods for the formation thereof by growing a thin oxide layer on shallow isolation trench surfaces while preventing oxide formation on adjacent nitride surfaces, followed by the deposition of, and oxide growth upon, a polysilicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.