Field effect transistor with metal oxide gate insulator and sidewall insulating film
US6930335B2 · kind B2 · utility
4Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2003 |
| Grant date | Aug 16, 2005 |
| Priority date | — |
| Expiry date | Aug 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device including a silicon substrate, a gate insulator disposed on the silicon substrate and containing a metal oxide, a gate electrode disposed on the gate insulator, and a sidewall insulating film disposed on a side of the gate insulator and the gate electrode and containing aluminum, silicon, oxygen and nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.