Magnetic memory device, method for writing on the same and method for reading from the same
US6930911B2 · kind B2 · utility
14Cited by
7References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2003 |
| Grant date | Aug 16, 2005 |
| Priority date | — |
| Expiry date | Jan 26, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Each memory cell is constituted by a pair of magnetic memory elements. The magnetic memory elements are connected at one ends to sense bit lines, and at the other ends to a sense word line through a pair of reverse current preventing diodes, respectively. A constant current circuit is disposed on the grounded side of the sense word line. The constant current circuit has a function of fixing a current flowing through the sense word line, and is constituted by a constant voltage generating diode, a transistor and a current limiting resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.