Integrated semiconductor laser device and method of manufacture thereof
US6931041B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2003 |
| Grant date | Aug 16, 2005 |
| Priority date | — |
| Expiry date | Feb 6, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2205
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An integrated buried heterojunction laser optically coupled to a ridge waveguide electro-absorption (EA) optical modulator having a raised ridge structure is manufactured on a single semiconductor substrate on which a plurality of semiconductor layers are grown, including at least one active layer through which optical radiation is coupled from the laser to the waveguide. Semiconductor layers above the active layer form a laser current conduction region and semiconductor layers adjacent the active layer form a laser current confinement region. The ridge structure is formed from one or more layers also used to form the laser current conduction region. The layers used to form the laser current confinement region do not extend adjacent the ridge structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.