Method of forming a patterned metal layer
US6933099B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2002 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Jan 6, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/048
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a patterned layer on a substrate including depositing a notched or undercut resist pattern to define at least one recess in the photoresist, with the notch or undercut circumjacent the base of the recess, sputtering a material into the recess and removing the resist and the material deposited on the resist characterised in that the aspect ratio of the recess and height of the mouth of the notch or undercut are such that the notch or undercut lies substantially in the shadow beneath the resist, the layer deposited upon it and the layer at the base of the recess in respect of any sputtered particle travelling in a straight line through the mouth of the recess such that material deposited on the walls of the recesses is not continuous with material deposited on the base of the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.