Substrate etch method and device
US6933237B2 · kind B2 · utility
0Cited by
12References
43Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2002 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Oct 23, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides methods and an etched substrate. In one embodiment, a method for etching a substrate is provided which comprises creating an etch hole in the substrate using a through the substrate etch and forming a junction on an interior of the etched hole for forming a semiconductor device therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.