Method of forming a thin film with a low hydrogen content on a semiconductor device
US6933245B2 · kind B2 · utility
60Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2003 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Oct 15, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a thin film with a low hydrogen contents is provided by positioning a substrate inside a processing chamber, and supplying reacting materials into the chamber, chemisorbing a portion of the reacting materials onto the substrate. Then, a nitrogen (N2) remote plasma treatment is performed to reduce the hydrogen content of thin film layer formed by chemisorption of the reacting materials on the substrate. Accordingly, a thin film is formed having a low hydrogen content, since the hydrogen bonds in the thin film layer formed by chemisorption of the reacting materials are removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.