Process for manufacturing a semiconductor device
US6933250B2 · kind B2 · utility
3Cited by
5References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2002 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Jan 15, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02211
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process of manufacturing a semiconductor device uses catalytic chemical vapor deposition. In the process, a reaction chamber containing a catalyzer and a substrate has gasses, including silane, ammonia, and hydrogen supplied to the reaction chamber. The gases are brought into contact with the catalyzer and then with the substrate to deposit a silicon nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.