Compound semiconductor high frequency switch device
US6933543B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2004 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Jun 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/4738
Abstract
A high frequency switch device includes an epitaxy substrate that is formed by sequentially stacking an AlGaAs/GaAs superlattic buffer layer, a first Si planar doping layer, an undoped first AlGaAs spacer, an undoped InGaAs layer, an undoped second AlGaAs spacer, a second Si planar doping layer having a doping density greater than that of the first Si planar doping layer, and an undoped GaAs/AlGaAs capping layer on a GaAs semi-insulated substrate. The undoped GaAs/AlGaAs capping layer is formed with a source electrode and a drain electrode that form an ohmic contact with the undoped GaAs/AlGaAs capping layer thereon, and a gate electrode formed between the source electrode and the drain electrode, thereby forming a Schottky contact with the undoped GaAs/AlGaAs capping layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.