SOI MOSFET
US6933569B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2003 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Sep 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A semiconductor device includes a semiconductor layer formed on an insulator, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film and extending in a first direction, source/drain regions formed in the semiconductor layer on both sides of the gate electrode, a body contact region in the semiconductor layer, a partial isolating region in which a field insulating film thicker than the gate insulating film intervenes between the semiconductor layer and an extending portion of the gate electrode, and a full isolating region in which the semiconductor layer on the insulator is removed. The full isolating region is formed to be in contact with at least a part of a side parallel to the first direction of the source/drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.