Method for photolithography using multiple illuminations and a single fine feature mask
US6934007B2 · kind B2 · utility
14Cited by
11References
63Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 2003 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | May 29, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70466
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method forms a feature pattern on a substrate by exposing the substrate, using a mask having a pattern of features thereon, with illumination having a first set of settings. The substrate is exposed a second time, using the same mask having the pattern of features thereon, with illumination having a second set of settings. The mask having the pattern of features thereon remains stationary between the two illumination exposures of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.