Semi-insulating bulk zinc oxide single crystal
US6936101B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2003 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Sep 24, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/16
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semi-insulating zinc-oxide (ZnO) single crystal. The crystal has resistivity of at least 1.5×103 ohm-centimeter (Ω-cm). The ZnO crystal can be produced from a melt contained by solid-phase ZnO to prevent introduction of undesired impurities into the crystal. The crystal can be a bulk single crystal that is cut and processed into wafer form of specified thickness. A dopant in a concentration ranging from 1×1015 atoms per cubic centimeter (atoms/cc) to 5×1021 atoms/cc can increase resistivity of the crystal relative to intrinsic ZnO. The dopant can be lithium (Li), sodium (Na), copper (Cu), nitrogen (N), phosphorus (P), and/or manganese (Mn).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.