Dry etching and mirror deposition processes for silicone elastomer
US6936141B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2002 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Jul 18, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB29K2083/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
According to the invention semiconductor processing procedures can be applied to silicone elastomeric materials. The surface tension of the elastomeric material is changed by depositing a thin layer of silicon, silicon nitride, silicon dioxide or a combination thereof onto the elastomer's exposed surface. In the illustrated embodiment it is shown that it is possible to deposit a thin layer of silicon dioxide onto the elastomer's exposed surface through re*active sputter deposition of silicon dioxide within an argon-oxygen plasma. In another plasma fabrication procedure, the elastomer material is directionally etched using a standard RF plasma etching system and a dry chemical oxygen-Freon removal procedure, which procedure volatilizes all of the components of the polydimethylsilicone (PDMS) or GE's RTV elastomer material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.