Zinc oxide semiconductor material
US6936188B1 · kind B1 · utility
8Cited by
3References
8Claims
0Family size
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Key dates
| Filing date | Mar 27, 2000 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Mar 27, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/542
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A zinc oxide semiconductor material comprising at least zinc and oxygen as constituent elements, which can be deterred with respect to the deterioration of doping characteristic, luminous characteristic and the like, compared with a conventional c-axial oriented one by orienting the crystal orientation plane to a-axis of the wurtzite structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.