Methods of controlling oxygen partial pressure during annealing of a perovskite dielectric layer
US6936301B2 · kind B2 · utility
2Cited by
2References
30Claims
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Key dates
| Filing date | May 6, 2002 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | May 6, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Oxygen partial pressure may be controlled during annealing of a perovskite dielectric layer by providing an oxygen-absorbing layer adjacent the perovskite dielectric layer, and annealing the perovskite dielectric layer in an ambient that includes an ambient oxygen partial pressure, such that the oxygen-absorbing layer locally reduces the oxygen partial pressure adjacent the perovskite dielectric layer to below the ambient oxygen partial pressure. Thus, a perovskite dielectric layer can be annealed without the need to provide ultra-high vacuum and/or ultra-high purity ambient environments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.