Method of depositing dielectric
US6936481B2 · kind B2 · utility
0Cited by
22References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 6, 2003 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Jan 6, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02183
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This invention relates to a method of depositing dielectric on a semiconductor substrate to form part of a capacitor. The method includes reactive sputtering a metal oxide layer from a target of metal onto the substrate wherein the support is biased to induce a DC voltage across the depositing dielectric as it forms. The voltage may be in the range of 200-300V.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.