Photoelectric conversion device and solid-state image sensing device using the same
US6936806B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2000 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Nov 3, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2235
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a photoelectric conversion device having a multiplying function and an image sensing device using the same. The photoelectric conversion device essentially comprises three layered structure: a carrier generation/multiplication layer composed of amorphous silicon to have both the function of absorbing light and generating carriers through optical excitation and the function of multiplying the generated carriers; an electron injection inhibiting layer composed of an amorphous silicon carbide of the p-type conductivity to inhibit injection of electrons into the carrier generation/multiplication layer; and a hole injection inhibiting layer composed of an amorphous silicon nitride of the n-type conductivity to inhibit injection of holes into the carrier generation/multiplication layer. The said carrier generation/multiplication layer is provided between said electron injection inhibiting layer and said hole injection inhibiting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.