Amplified photoconductive gate
US6936821B2 · kind B2 · utility
0Cited by
4References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2002 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Apr 11, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/45138
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present invention includes a semiconductor epitaxial structure optimized for photoconductive free space terahertz generation and detection; and amplifier circuits for photoconductively sampled terahertz detection which may employ the optimized epitaxial structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.