Light emitting diode having an insulating substrate

US6936860B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Shu-Wen Sung · Baoshan, TW
• Chin-Fu Ku · Baoshan, TW
• Chia-Cheng Liu · Baoshan, TW
• Min-Hsun Hsieh · Hsinchu, TW
• Chao-Nien Huang · Hsinchu, TW
• Chen Ou · Hsinchu, TW
• Chuan-Ming Chang · Hsinchu, TW

Key dates

• Filing date: May 16, 2002
• Grant date: Aug 30, 2005
• Expiry date: May 16, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8252

Abstract

An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n+-type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n+-type contact layer; a light-emitting layer positioned on the n-type cladding layer; a p-type cladding layer positioned on the light-emitting layer; a p-type contact layer positioned on the p-type cladding layer; an n+-type reverse-tunneling layer positioned on the p-type contact layer; a p-type transparent ohmic contact electrode positioned on the n+-type reverse-tunneling layer; and an n-type transparent ohmic contact electrode positioned on the second surface of the n+-type contact layer. The p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode are made of the same materials.