Forward and reverse blocking devices

US6936908B2 · kind B2 · utility

Assignee

• IXYS, LLC · US

Inventors

• Ulrich Kelberlau · Lampertheim, DE
• Peter Ingram · Hemsbach, DE
• Nathan Zommer · Los Altos, US

Key dates

• Filing date: Mar 13, 2002
• Grant date: Aug 30, 2005
• Expiry date: Jan 3, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/106

Abstract

A power device includes a gate electrode, a source electrode, and a drain electrode provided within an active region of a semiconductor substrate of first conductivity type. A vertical diffusion region of second conductivity is provided at a periphery the active region. The vertical diffusion region extends continuously from a top surface of the substrate to a bottom surface of the substrate. The vertical diffusion region includes an upper portion having a first depth and a lower portion having a second depth that is substantially greater than the first depth.