Integrated semiconductor laser and waveguide device
US6937632B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2003 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Mar 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2205
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A buried heterojunction laser optically coupled with a buried waveguide electro-absorption (EA) optical modulator via an active layer is fabricated on a substrate carrying a number of deposited semiconductor layers. The laser component includes a laser current conduction region and an adjacent laser current confinement region. The waveguide component includes a waveguide current confinement region comprising first and second current blocking structures formed from different grown semiconductor layers. An extension of the first current blocking structure is interposed between the second current blocking structure and the waveguide current conduction region. Because each of the components is flanked by current confinement regions of differing structures, the resistive and capacitative properties of the current confinement regions can be selected to optimise the performance of that component for a particular use.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.