Method and system for finite element modeling and simulation of enhanced magnetoresistance in thin film semiconductors with metallic inclusions
US6937967B2 · kind B2 · utility
1Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2001 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Jan 26, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/23
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
This invention relates to a method and system for finite element modeling of enhanced magnetoresistance in thin film semiconductors containing at least one metallic inclusion therein. The method and system utilizes finite element analysis techniques as a function of the applied magnetic field and the geometry of the device for comparing the device characteristics with predetermined qualities and modifying the device to achieve a correlation between the device characteristics and the predetermined qualities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.