Nano-size semiconductor component and method of making
US6939748B1 · kind B1 · utility
22Cited by
43References
30Claims
0Family size
Inventor
Key dates
| Filing date | Oct 13, 2003 |
| Grant date | Sep 6, 2005 |
| Priority date | — |
| Expiry date | Oct 13, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S435/965
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is disclosed for making a nano-size semiconductor component within a wide-bandgap semiconductor substrate. A first thermal energy beam is directed onto a first portion of the wide-bandgap semiconductor substrate to change the structure of the wide-bandgap semiconductor substrate into a first element of the semiconductor component. A second thermal energy beam is directed onto a second portion of the wide-bandgap semiconductor substrate adjacent to the first portion to form a second element of the semiconductor component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.