Body contact MOSFET

US6940130B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Andres Bryant · South Burlington, US
• Peter E. Cottrell · South Burlington, US
• John J. Ellis-Monaghan · Grand Isle, US
• Robert J. Gauthier, Jr. · South Burlington, US
• Edward J. Nowak · South Burlington, US
• Jed H. Rankin · South Burlington, US
• Fariborz Assaderaghi · Jefferson Valley, US

Key dates

• Filing date: Oct 16, 2003
• Grant date: Sep 6, 2005
• Expiry date: Oct 16, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6711

Abstract

A body contact structure utilizing an insulating structure between the body contact portion of the active area and the transistor portion of the active area is disclosed. In one embodiment, the present invention substitutes an insulator for at least a portion of the gate layer in the regions between the transistor and the body contact. In another embodiment, a portion of the gate layer is removed and replaced with an insulative layer in regions between the transistor and the body contact. In still another embodiment, the insulative structure is formed by forming multiple layers of gate dielectric between the gate and the body in regions between the transistor and the body contact. The body contact produced by these methods adds no significant gate capacitance to the gate.