MOS ESD CDM clamp with integral substrate injection guardring and method for fabrication

US6940131B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• David J. Baldwin · Allen, US
• Joseph A. Devore · Dallas, US
• Robert Steinhoff · Dallas, US
• Jonathan Brodsky · Fort Lauderdale, US

Key dates

• Filing date: Jun 30, 2003
• Grant date: Sep 6, 2005
• Expiry date: Oct 23, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/811

Abstract

The present invention includes a MOS device (100) that has a P-type substrate (102) and an N-type drain region (104) formed within the substrate (102). An annular N-type source region (106) generally surrounds the drain region (104). The source region (106) serves as both the source for the MOS device (100) and a sacrificial collector guard ring for an electrostatic discharge protection circuit. An annular gate region (110) generally surrounds the drain region (104) and is electrically insulated from the drain region (104) and electrically connected to the source region (106). An annular P-type bulk region (108) generally surrounds the source region (106) and is electrically connected to the source region (106).