Semiconductor device having an angled compensation implant and method of manufacture therefor
US6940137B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2003 |
| Grant date | Sep 6, 2005 |
| Priority date | — |
| Expiry date | Sep 19, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor device 200 having an angled compensation implant, a method of manufacture therefore and a method of manufacturing an integrated circuit including the angled compensation implant. In one embodiment, the method of manufacturing the semiconductor device 200 includes creating a halo implant 240 in a substrate 210, introducing a compensation implant 260 in the substrate 210 at an angle abnormal to the substrate 210 and forming a source/drain region 250 above the compensation implant 260, the angle reducing a capacitance associated with the halo implant 240 or the source/drain region 250. The method further includes placing a gate structure 230 over the substrate 210.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.