Surface acoustic wave device
US6940208B2 · kind B2 · utility
6Cited by
17References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 19, 2002 |
| Grant date | Sep 6, 2005 |
| Priority date | — |
| Expiry date | Jul 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/643
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A surface acoustic wave device includes a ZnO dielectric thin film on a quartz substrate and an IDT electrode having strips between the ZnO thin film and the quartz substrate. The IDT electrode has at least one region where the strips are disposed at an interval defined by approximately a half-wavelength of the surface acoustic wave. The duty ratio of the IDT electrode is preferably more than about 0.5. Alternatively, a protrusion is formed via a slope in the region of the ZnO thin film where the IDT electrode is disposed, and the inclination angle θ of the slope is more than about 30°.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.