Doped field-emitter
US6940218B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2003 |
| Grant date | Sep 6, 2005 |
| Priority date | — |
| Expiry date | Dec 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30469
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A field-emission electron source element includes a cathode substrate, an insulating layer that is formed on the cathode substrate and has an opening, a lead electrode formed on the insulating layer, and an emitter formed in the opening. A surface layer of an electron emitting region of the emitter is doped with at least one reducing element selected from the group consisting of hydrogen and carbon monoxide. Further, an image display apparatus including the above-mentioned field-emission electron source element is provided. This makes it possible to obtain not only a stable field-emission electron source element that does not cause a current drop even after a high current density operation for a long time but also a high-performance image display apparatus that can maintain a stable display performance over a long period of time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.