Industrial vapor conveyance and deposition
US6941973B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 23, 2001 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Oct 17, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T137/85938
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for deposition and condensation and reaction and separation and distillation employing at least two chambers separated by a diaphragm with at least one separation wall and at least one orifice or flow duct or plurality thereof. The new process includes (i) a condensation-free formation of a reservoir of an uncondensed phase under controlled flow conditions in front of a diaphragm, (ii) local pulse forces in an orifice or flow duct is controlled by local flow speed or local flow density or local flow pressure of said uncondensed phase to provide macroscopic control of an uncondensed intermediary and final phase or material and (iii) controlled conveyance and production rates under conditions of said local control and is independent from gravitational acceleration so orientation of individual modules or units or assembly of a production plant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.