Methods of forming integrated optoelectronic devices
US6942814B2 · kind B2 · utility
7Cited by
27References
49Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2002 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Aug 31, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B26/0841
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods of forming optoelectronic devices include forming an electrically conductive layer on a first surface of a substrate and forming a mirror backing layer from the electrically conductive layer by forming an endless groove that extends through the electrically conductive layer. A step is then performed to remove a portion of the substrate at a second surface thereof, which extends opposite the first surface. This step exposes a front surface of the mirror backing layer. An optically reflective mirror surface is then formed on the front surface of the mirror backing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.